| 翻訳と辞書 |
DDR4 SDRAM
In computing, DDR4 SDRAM, an abbreviation for double data rate fourth generation synchronous dynamic random-access memory, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface. Released to the market in 2014,〔(【引用サイトリンク】title=Samsung mass-produces DDR4 )〕 it is one of the latest variants of dynamic random access memory (DRAM), some of which have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. It is not compatible with any earlier type of random access memory (RAM) due to different signaling voltages, physical interface and other factors.
DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory.〔(【引用サイトリンク】title= How Intel Plans to Transition Between DDR3 and DDR4 for the Mainstream )〕
== Features ==
The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard theoretically allows for DIMMs of up to 512 GiB in capacity, compared to the DDR3's theoretical maximum of 128 GiB per DIMM.〔(【引用サイトリンク】title=Why migrate to DDR4? )〕
DDR4 operates at a voltage of 1.2 V with a frequency between 800 and 1600 MHz, compared to frequencies between 400 and 1067 MHz and voltage requirements of 1.5 or 1.65 V of DDR3. Although a low-voltage standard has yet to be finalized (), it is anticipated that low-voltage DDR4 will run at a voltage of 1.05 V, compared to DDR3's low-voltage standard (DDR3L) which requires 1.35 V to operate.〔.〕
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
■ウィキペディアで「DDR4 SDRAM」の詳細全文を読む
スポンサード リンク
| 翻訳と辞書 : 翻訳のためのインターネットリソース |
Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.
|
|